symbol v ds v gs i dm t j , t stg parameter symbol typ max t 10s 76 95 steady state 118 150 steady state r q jl 54 68 v t a =25c junction and storage temperature range t a =70c power dissipation a absolute maximum ratings t a =25c unless otherwise noted maximum 12 units parameter v drain-source voltage 20 i d gate-source voltage t a =70c continuous drain current a p d 5 t a =25c 25 pulsed drain current b maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a c/w r q ja c -55 to 150 4 1.3 0.8 a w AO6804A product summary v ds = 20v i d = 5.0a (v gs = 4.5v) r ds(on) < 28m (v gs = 4.5v) r ds(on) < 30m (v gs = 4.0v) r ds(on) < 34m (v gs = 3.1v) r ds(on) < 39m (v gs = 2.5v) the AO6804A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch applications. top view d1/d2 d1/d2 s2 s1 g2 g1 1 2 3 6 5 4 g1 rg d1 11 s1 g2 rg d2 11 s2 www.freescale.net.cn 20v dual p-channel mosfet general description 1 / 5
symbol min typ max units bv dss 20 v 1 t j = 55c 5 i gss 10 u a v gs(th) 0.5 0.7 1 v i d(on) 25 a 18 23 28 t j =125c 26 33 40 19 24 30 m w 20 27 34 m w 21 30 39 m w g fs 18 s v sd 0.65 1 v i s 1.3 a c iss 180 225 pf c oss 95 pf c rss 18 pf r g 2.7 4 k w q g 5.6 7.5 nc q gs 0.85 nc q gd 1.7 nc t d(on) 172 ns t r 368 ns t d(off) 2.94 u s t f 2.5 u s t rr 32 43 ns q rr 3.2 nc body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d = 250 m a, v gs = 0v v gs = 4.5v, v ds = 5v v gs = 4.5v, i d = 5.0a reverse transfer capacitance i f =5a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds = v gs i d = 250 m a v ds = 20v, v gs = 0v v ds = 0v, v gs = 10v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs = 2.5v, i d = 4.0a i s = 1a,v gs = 0v v ds = 5v, i d = 5.0a v gs = 4.0v, i d = 4.5a v gs = 3.1v, i d = 4.5a switching parameters total gate charge gate source charge gate drain charge v gs = 4.5v, v ds = 10v, i d = 5a turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =2.0 w , r gen =3 w turn-off fall time turn-on delaytime dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =10v, f=1mhz input capacitance output capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a = 25c. in any given application depends on the user's specifi c board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: nov. 2010 www.freescale.net.cn AO6804A 20v dual p-channel mosfet 2 / 5
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 3v 4.5v 2v 1.8v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = 5v -40c 22 24 26 28 30 32 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs = 4.5v v gs = 2.5v v gs = 3.1v v gs = 4.0v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 10 20 30 40 50 60 70 80 1 2 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d = 5.0a 25c 125c -40c v gs =1.5v v gs = 4.5v i d = 5a 2.5v www.freescale.net.cn AO6804A 20v dual p-channel mosfet 3 / 5
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 0 1 2 3 4 5 6 7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 10 100 1000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds = 10v i d = 5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn AO6804A 20v dual p-channel mosfet 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off www.freescale.net.cn AO6804A 20v dual p-channel mosfet 5 / 5
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